STP55NF06 - MOSFET N-Ch 60 Volt 55 Amp Transistor [Original]

STP55NF06 N-Channel Power MOSFET - 60V 55A High-Efficiency Transistor

The STP55NF06 is a high-performance N-Channel Power MOSFET from STMicroelectronics, engineered for demanding power management applications. It utilizes the unique STripFET process, an advanced design that significantly minimizes input capacitance and gate charge, boosting overall efficiency. This MOSFET serves as an ideal primary switch for sophisticated, high-efficiency isolated DC-DC converters. It excels in critical telecom and computer power supply environments, offering reliable performance. Its low gate charge driving requirements simplify circuit design and enhance overall system performance. This robust 60V, 55A MOSFET is housed in a TO-220 package for easy integration and thermal management. Furthermore, it is lead-free and fully RoHS compliant, meeting modern environmental standards.

Specifications:

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.018 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 to 175°C
• Power Dissipation (Pd): 110W
• Package Type: TO-220

Key features and benefits:

• High-performance N-Channel Power MOSFET
• 60V Drain-Source Breakdown Voltage (Vds)
• Continuous Drain Current (Id) up to 50A
• Ultra-low Drain-Source Resistance (Rds On) of 0.018 Ohms
• STripFET process for minimized input capacitance and gate charge
• Optimized for high-efficiency isolated DC-DC converters
• Robust TO-220 package for easy integration
• Lead-free and RoHS compliant

Applications:

• Advanced high-efficiency isolated DC-DC converters
• Telecom power supply applications
• Computer power supply applications
• Power management circuits requiring low gate charge driving

Package Includes:

*Image shown is a representation only.

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