IRF3205 N-Channel - HEXFET Power MOSFET transistor

IRF3205 N-Channel HEXFET Power MOSFET Transistor

The IRF3205 is a robust N-Channel HEXFET Power MOSFET designed for high-performance applications. This transistor utilizes advanced process technology to deliver superior efficiency. It boasts an ultra-low on-resistance, minimizing power loss in your circuits. With a dynamic dv/dt rating, it ensures reliable operation under varying conditions. The IRF3205 supports a wide 175°C operating temperature, making it suitable for harsh environments. Its fast switching capabilities are perfect for high-frequency designs. This fully avalanche-rated MOSFET provides enhanced ruggedness and reliability. It's an essential component for power management and switching circuits. Experience stable and efficient performance with this industry-standard MOSFET.

Specifications:

• Drain-Source Voltage (Vds): 100V
• Drain-Gate Voltage (Vdg): 100V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id @ 25°C): 30A
• Total Power Dissipation (Ptot): 150W
• Transistor Type: N-Channel
• Technology: HEXFET Power MOSFET

Key features and benefits:

• Advanced Process Technology for optimal performance
• Ultra-Low On-Resistance for improved efficiency
• Dynamic dv/dt Rating ensures reliable operation
• Wide 175°C Operating Temperature
• Fast Switching for high-frequency applications
• Fully Avalanche Rated for enhanced ruggedness
• High Drain Current (30A) and Voltage (100V) capabilities

Applications:

• High-efficiency switching power supplies
• Motor control circuits
• DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Automotive electronic systems

Package Includes:

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