BS170 N-Channel Switching FET [Original]

BS170 N-Channel Switching FET MOSFET Transistor | High-Performance 60V 0.5A

The BS170 is a high-performance N-Channel Switching FET, ideal for diverse electronic applications. This robust MOSFET transistor delivers reliable and efficient switching capabilities. It ensures fast response times and stable operation for critical projects. Its compact form factor allows seamless integration into various circuit designs. The BS170 provides a dependable solution for both hobbyists and professional engineers. It's essential for power management, signal amplification, and general-purpose switching. The N-Channel configuration ensures broad compatibility with common circuit topologies. Experience superior performance and durability with this versatile switching FET.

Specifications:

• Drain-Source Voltage (Vds): 60V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 0.5A
• Total Device Dissipation (PD @ TA=25°C): 350 mW
• Operating & Storage Junction Temperature: –55 to +150 °C
• Transistor Type: N-Channel MOSFET

Key features and benefits:

• High-speed switching capability for efficient operation
• N-Channel enhancement mode MOSFET
• Low on-resistance for minimal power loss
• Compact TO-92 package for space-constrained designs
• Wide operating temperature range for diverse environments
• Robust and reliable performance for critical applications
• Suitable for general-purpose switching and amplification

Applications:

• General-purpose switching circuits
• Power management and conversion
• Signal amplification and buffering
• Motor control and drive circuits
• LED lighting control
• Logic level shifting

Package Includes:

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