BS170 N-Channel Switching FET [Original]

BS170 N-Channel Switching MOSFET Transistor

The BS170 is a high-performance N-Channel Switching FET designed for a wide range of electronic applications. This robust MOSFET transistor offers reliable and efficient switching capabilities. It's an excellent choice for projects requiring fast response times and stable operation. With its compact form factor, the BS170 integrates seamlessly into various circuit designs. It provides a dependable solution for both hobbyists and professional engineers. This component is essential for power management, signal amplification, and general-purpose switching. Its N-Channel configuration ensures compatibility with common circuit topologies. Experience superior performance and durability with the BS170 switching FET.

Specifications:

• Drain-Source Voltage (Vds): 60V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 0.5A
• Total Device Dissipation (PD @ TA=25°C): 350 mW
• Operating & Storage Junction Temperature: –55 to +150 °C
• Transistor Type: N-Channel MOSFET

Key features and benefits:

• High-speed switching capability for efficient operation
• N-Channel enhancement mode MOSFET
• Low on-resistance for minimal power loss
• Compact TO-92 package for space-constrained designs
• Wide operating temperature range for diverse environments
• Robust and reliable performance for critical applications
• Suitable for general-purpose switching and amplification

Applications:

• General-purpose switching circuits
• Power management and conversion
• Signal amplification and buffering
• Motor control and drive circuits
• LED lighting control
• Logic level shifting

Package Includes:

*Image shown is a representation only.

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