MJE350 PNP Power Transistor

MJE350 - Power Transistors

The MJE350 is a PNP silicon power transistor designed for medium-power switching and linear amplification. Packaged in a TO-225 through-hole case, it is commonly used in audio amplifiers, voltage regulators, and general-purpose power circuits. With a collector-emitter voltage rating of up to 300V, it is ideal for high-voltage applications requiring stability and reliability.

Key Features & Benefits:

• PNP Power Transistor: Designed for linear and switching applications.

• High Voltage Rating: Up to 300V collector-emitter, suitable for demanding power circuits.

• Moderate Current Handling: Supports collector currents up to 0.5A continuously.

• TO-225 Package: Easy to mount and provides effective heat dissipation with an external heatsink.

• Complementary Pair: Works with MJE340 (NPN) for push-pull configurations.

Specifications:

• Transistor Type: PNP

• Package: TO-225 / TO-126 (varies by manufacturer)

• Collector-Emitter Voltage (V_CEO): 300V

• Collector-Base Voltage (V_CBO): 300V

• Emitter-Base Voltage (V_EBO): 5V

• Collector Current (I_C): 0.5A continuous

• Power Dissipation (P_D): 625mW to 800mW (without heatsink), up to 20W with proper heatsink

• DC Current Gain (h_FE): 30–240 (depending on collector current)

• Transition Frequency (f_T): 4 MHz (typical)

• Operating Temperature: -65°C to +150°C

• RoHS Compliant: Yes

Applications:

• Audio amplifier output stages

• Voltage regulation and power control

• Inverter and converter circuits

• General-purpose linear and switching circuits

• High-voltage DC loads