MJ2955 Bipolar (BJT) Single Transistor, General Purpose, PNP, -60 V, 800 KHz, 115 W

MJ2955 PNP BJT Power Transistor, -60V, 115W

The MJ2955 is a high-performance PNP Bipolar Junction Transistor (BJT) designed for robust power applications. This general-purpose single transistor offers exceptional reliability and efficiency. With a collector-emitter voltage of -60V and a power dissipation of 115W, it handles demanding tasks with ease. It operates effectively up to 800 KHz, making it suitable for various high-frequency circuits. The MJ2955 features an excellent safe operating area, ensuring stable performance under diverse conditions. Its impressive DC current gain of 20-70 at 4 Adc makes it highly versatile. This component is a go-to choice for engineers seeking dependable power management solutions. It's built to deliver consistent results in critical electronic designs.

Specifications:

• Transistor Type: Bipolar (BJT) Single
• Polarity: PNP
• Collector-Emitter Voltage (VCEO): -60 V
• Power Dissipation (Pd): 115 W
• Transition Frequency (fT): 800 KHz
• DC Current Gain (hFE): 20-70 @ IC = 4 Adc
• Collector-Emitter Saturation Voltage (VCE(sat)): 1.1 Vdc (Max) @ IC = 4 Adc
• Safe Operating Area: Excellent
• Package Type: TO-3
• Application: General Purpose

Key features and benefits:

• PNP Bipolar Junction Transistor (BJT) type
• High power dissipation: 115 W
• Collector-Emitter Voltage (VCEO): -60 V
• Transition frequency (fT): 800 KHz
• DC Current Gain (hFE): 20-70 @ IC = 4 Adc
• Collector-Emitter Saturation Voltage (VCE(sat)): 1.1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area (SOA)
• General purpose design for broad application

Applications:

• High-power audio amplifiers
• Disk head positioners
• Switching power supplies
• Linear power applications
• General purpose power management
• Motor control circuits

Package Includes:

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