BS170 N-Channel Switching FET [Original]

BS170 N-Channel Switching FET MOSFET Transistor - 60V, 0.5A

The BS170 is an N-Channel Switching FET MOSFET transistor. It provides switching capabilities for electronic applications. This MOSFET transistor exhibits fast response times and stable operation. Its compact form factor supports integration into circuit designs. The BS170 supports power management, signal amplification, and general-purpose switching. The N-Channel configuration is compatible with common circuit topologies.

Specifications:

• Drain-Source Voltage (Vds): 60V
• Gate-Source Voltage (Vgs): 20V
• Continuous Drain Current (Id): 0.5A
• Total Device Dissipation (PD @ TA=25°C): 350 mW
• Operating & Storage Junction Temperature: –55 to +150 °C
• Transistor Type: N-Channel MOSFET

Key features and benefits:

• High-speed switching
• N-Channel enhancement MOSFET
• Low on-resistance
• TO-92 package
• Operating temperature range: –55 to +150 °C
• Supports switching and amplification

Applications:

• Switching circuits
• Power management and conversion
• Signal amplification and buffering
• Motor control and drive circuits
• LED lighting control
• Logic level shifting

Frequently Asked Questions:

Q: What is the package type of the BS170?
A: The BS170 is supplied in a TO-92 package.

Q: What is the maximum Drain-Source Voltage (Vds) for this transistor?
A: The maximum Drain-Source Voltage (Vds) for the BS170 is 60V.

Q: Is the BS170 suitable for signal amplification?
A: Yes, the BS170 is suitable for signal amplification circuits.

Package Includes:

*Image shown is a representation only.

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