4N65 N-mosfet D 650V 4A [Original] - N-Channel transistor - TO-220f package

4N65 N-Channel MOSFET D 650V 4A TO-220f Power Transistor

The 4N65 is an N-Channel MOSFET. It is designed for power applications. The device features a drain-source voltage of 650V and a continuous drain current of 4A. It is housed in a TO-220f package. This package provides thermal resistance. Applications include switching power supplies, motor control, and lighting ballasts. The component utilizes advanced process technology for fast switching speeds. It maintains operation up to 175°C. An integrated diode provides circuit protection and efficiency. The transistor is fully avalanche-rated for power management.

Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 650V
• Continuous Drain Current (Id): 4A
• Total Power Dissipation (Pd): 54W
• Package Type: TO-220f
• Operating Temperature: -55°C to 175°C
• Switching Speed: Fast
• Integrated Diode: Yes
• Process Technology: Advanced

Key features and benefits:

• Advanced process technology
• Operating temperature range: -55°C to 175°C
• Fast switching capability
• N-Channel Enhancement Mode operation
• Fully avalanche rated
• Integrated diode
• TO-220f package with low thermal resistance

Applications:

• Switching Power Supplies (SMPS)
• Motor Control Circuits
• Lighting Ballasts
• DC-DC Converters
• Industrial Power Management

Frequently Asked Questions:

Q: What is the primary function of the 4N65 MOSFET?
A: The 4N65 is an N-Channel MOSFET designed for power switching applications, including power supplies and motor control.

Q: What are the key electrical ratings of the 4N65?
A: The 4N65 features a 650V drain-source voltage (Vds) and a 4A continuous drain current (Id).

Q: What package type does the 4N65 utilize?
A: The 4N65 is housed in a TO-220f package, which provides thermal resistance.

Package Includes:

*Image shown is a representation only.

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