4N65 N-mosfet D 650V 4A [Original] - N-Channel transistor - TO-220f package

4N65 N-Channel MOSFET D 650V 4A TO-220f Power Transistor

The 4N65 is an N-Channel MOSFET. It features a drain-source voltage of 650V and a continuous drain current of 4A. The device is housed in a TO-220f package. This package provides thermal resistance. It utilizes advanced process technology for fast switching speeds. Operation is maintained up to 175°C. An integrated diode is included. The transistor is fully avalanche-rated.

Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 650V
• Continuous Drain Current (Id): 4A
• Total Power Dissipation (Pd): 54W
• Package Type: TO-220f
• Operating Temperature: -55°C to 175°C
• Switching Speed: Fast
• Integrated Diode: Yes
• Process Technology: Advanced

Key features and benefits:

• Advanced process technology
• Operating temperature range: -55°C to 175°C
• Fast switching capability
• N-Channel Enhancement Mode operation
• Fully avalanche rated
• Integrated diode
• TO-220f package

Applications:

• Switching Power Supplies (SMPS)
• Motor Control Circuits
• Lighting Ballasts
• DC-DC Converters
• Industrial Power Management

Frequently Asked Questions:

Q: Is the 4N65 MOSFET compatible as a direct replacement for other power switching transistors?
A: Compatibility with other transistors requires matching electrical specifications and package type. The 4N65 is an N-Channel MOSFET for power switching applications.

Q: What are the maximum voltage and current ratings for the 4N65 MOSFET?
A: The 4N65 features a 650V drain-source voltage (Vds) and a 4A continuous drain current (Id).

Q: What are the physical dimensions or mounting considerations for the TO-220f package of the 4N65?
A: The 4N65 is housed in a TO-220f package. This package provides thermal resistance and has specific dimensions for mounting.

Package Includes:

*Image shown is a representation only.

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