2N918 Bipolar - RF Transistor, NPN, 15 V, 600 MHz, 300 W, 50 mA, TO-72

2N918 NPN Bipolar RF Transistor - 15V, 600 MHz, TO-72

The 2N918 is an NPN Bipolar RF Transistor. It is designed for radio frequency applications, including VHF and UHF circuits. This component features a 15V collector-emitter voltage and a 600 MHz transition frequency. It provides stable operation across a wide temperature range, up to 200°C. The transistor is housed in a compact TO-72 metal package. It supports through-hole mounting. The 2N918 is suitable for amplifier, mixer, and oscillator designs.

Specifications:

• Transistor Type: NPN Bipolar RF
• Collector Emitter Voltage (Vceo): 15V
• Transition Frequency (ft): 600 MHz
• Power Dissipation (Pd): 300 W
• DC Collector Current (Ic): 50 mA
• Case Style: TO-72
• Number of Pins: 4
• DC Current Gain (hFE): 20
• Mounting Type: Through Hole
• Max Operating Temperature: 200°C

Key features and benefits:

• NPN Bipolar RF Transistor architecture
• 15V Collector-Emitter Voltage (Vceo)
• 600 MHz Transition Frequency (ft)
• 50 mA DC Collector Current
• Low noise characteristics
• TO-72 metal package
• Through-hole mounting
• Operating temperature range up to 200°C

Applications:

• Low noise VHF and UHF amplifiers
• RF mixer circuits
• High-frequency oscillator designs
• Radio communication equipment
• Signal processing in RF systems

Frequently Asked Questions:

Q: What is an NPN Bipolar RF Transistor?
A: An NPN Bipolar RF Transistor is a semiconductor device used for amplification or switching in radio frequency circuits. It utilizes both electron and hole carriers for conduction, with the NPN configuration indicating the doping layers.

Q: What are common applications for RF transistors?
A: RF transistors are commonly used in applications such as low noise amplifiers, power amplifiers, mixers, and oscillators within radio communication equipment, radar systems, and signal processing circuits.

Q: What does 'transition frequency (ft)' signify for a transistor?
A: Transition frequency (ft) is the frequency at which the common-emitter current gain of a transistor drops to unity. It indicates the maximum useful frequency for amplification and is a key parameter for high-frequency performance.

Package Includes:

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