2N2219A Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 400 mW - TO-39

2N2219A NPN Bipolar (BJT) Single Transistor - TO-39 Package

The 2N2219A is a high-performance NPN Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. Encased in a durable TO-39 metal package, this single transistor offers excellent reliability and thermal stability. It is primarily utilized for signal amplification and high-speed switching operations in various circuits. With a collector-emitter voltage of 40V and a transition frequency of 300MHz, it delivers robust performance. The 2N2219A can handle a power dissipation of 400mW, making it suitable for demanding tasks. Its advanced process technology ensures low error voltage and fast switching speeds. This versatile component is a staple for engineers and hobbyists alike, providing full-voltage operation and high current handling capability. Integrate the 2N2219A into your designs for efficient and precise electronic control.

Specifications:

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• DC Collector Current: 800mA
• Power Dissipation Pd: 400mW
• Transistor Case Style: TO-39
• Transistor Mounting: Through Hole
• No. of Pins: 3Pins
• Transition Frequency ft: 300MHz
• DC Current Gain hFE: 35hFE
• Operating Temperature Max: 200°C

Key features and benefits:

• NPN Bipolar Junction Transistor (BJT)
• Robust TO-39 Metal Can Package
• High 40V Collector-Emitter Voltage
• Fast 300MHz Transition Frequency
• 400mW Power Dissipation
• Advanced Process Technology for Low Error Voltage
• High Power and Current Handling Capability
• Fast Switching Speed for Efficient Operation

Applications:

• High-speed switching applications
• Signal amplification circuits
• General-purpose electronic designs
• Power management systems
• Oscillator and modulator circuits

Package Includes:

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