Mixed 10 Types of LED - (5 piece each) Each LED type packed separetely for easy usage Red LED -Clear - 5mm Red LED - Diffused - 5mm Yellow LED - Diffused - 5mm Yellow LED -Clear - 5mm Green LED - Diffused - 5mm White LED -Clear - 5mm Amber LED Diffused -5mm Blue Clear LED - 5mm Red LED - D..

Mixed Transistor 10 types (each 5 pieces) Essential transistor for all basic & advance circuits. Asorted transistor a must have for hobbyist. List of Transistors (separtely packed - each 5 pieces) 2N3904 2N3906 BC547 BC548 BC549 BC557 BC558 BF494 BD139 BD140 * Image sho..

IRF540N MOSFET - N-Channel Transistor(Hexfet Power Mosfet) Free shipping for >50 Quantity order (only for India) Specifications Drain-Source Volt (Vds): 100V Drain-Gate Volt (Vdg): 100V Gate-Source Volt (Vgs): 20V Drain Current (Id): 30A Power Dissipation (Ptot): 150W Type: N-Channel Applicatio..

IRF9Z34N (P-Channel Power Mosfet) Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extr..

IRFP054N - MOSFET N Channel Power Transistor [International Rectifier] Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know..

IRFP250N - MOSFET N Channel Power Transistor [International Rectifier] The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superio..

IRFP260N - MOSFET N Channel Power Transistor [International Rectifier] Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fo..

IRFP460 - MOSFET N Channel Power Transistor [International Rectifier] The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior..

IRLML2502TRPBF International Rectifier - MOSFET - SOT23 General description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOS..

L14G2/G3 - Phototransistor General Description L14G2/G3 is an NPN phototransistor. It acts as a photodetector in the sense that it can convert the incident light into electric response. They are commonly used as sensors usually paired with a light source like LED.    These are the bipolar transistors having a transparent c..

L293D Motor Driver/Interface Board with 7805 Power supply General Description This module is a medium power motor driver perfect for driving DC motors and Stepper motors. It uses the popular L293D H-bridge motor driver IC. It can drive 4 DC motors in one direction, or drive 2 DC motors in both the directions with speed control. The driv..

LDR 8mm - Photocell Features Coated with epoxy Good reliability Small volume High sensitivity Fast response Good spectrum characteristic *Image shown is a representation only...

LPG Gas Sensor Module General Description The LPG Gas sensor Module for use in Home or Factory to warn of fatal LPG build-ups. The module uses MQ-6 sensor to sense LPG leak. It's ready to run circuit with no additional circuitry. Corresponding to the concentration of the gas it provides both analog and digital output. The output interfa..

MAC97A 0.8A 600V TRIAC (High Quality - Original) Futures Non Repetitive On-State Current: 8 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 10 uA On-State Voltage: 1.9 V Holding Current Ih Max: 10 mA Gate Trigger Voltage - Vgt: 2.5 V Gate Trigger Current -..

2N2222 NPN Switching Transistor (PZT2222) Specification Collector-Emitter Volt (Vceo): 40V Collector-Base Volt (Vcbo): 75V Collector Current (Ic): 0.6A hfe: 100-300 @ 150mA Power Dissipation (Ptot): 1.15W Current-Gain-Bandwidth (ftotal): 300MHz Type: NPN Application Linear amplification ..