![5pcs: 1N5819 40V 1A Schottky Barrier Diode [MIC - Original]](https://www.electroncomponents.com/image/cache/catalog/components/diode/6a4_diode-500x500.jpg "5pcs: 1N5819 40V 1A Schottky Barrier Diode [MIC - Original]")
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5pcs: 1N5819 40V 1A Schottky Barrier Diode [MIC - Original]
- Product Code: DR-1N5819
- Availability: In Stock
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₹6.00 (+ GST)
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- 25 or more quantity/sets : ₹5.00
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1N5819 : 40V 1A - Schottky Barrier Diode (pack of 5)
General Description
The Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Features
- Peak Repet. Reverse Voltage (Vrrm): 40V
- Max. RMS Reverse Voltage (Vr): 28V
- Average Rectified Current (Io): 1.0A
- Max. Reverse Current (Ir): 1.0mA
- Max. Forward Voltage Drop (Vf): 0.60V
- Make/Brand: MIC
Package includes: 5 x 1N5819 Diode
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